NDB6060L MOSFET Description
ON Semiconductor's patented, high cell density, DMOS technology is used to manufacture this logic level N-Channel enhancement MOSFET NDB6060L. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The NDB6060L is ideal for low voltage applications such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, low in-line power loss, and transient resistance.
NDB6060L MOSFET Features
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V
Low drive requirements allow operation directly from logic drivers
175°C maximum junction temperature rating
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications
Critical DC electrical parameters specified at elevated temperature
High-density cell design for extremely low RDS(ON)
VGS(TH) < 2.0V.
NDB6060L MOSFET Applications
Battery Motor Control
Secondary Side Synchronous
Three-Phase Bridge for Brushless DC Motor Control
Up to 12s Battery Power Tools
Buck Converters
Power Converters with Multi-Megahertz Operation
Other Half and Full-Bridge Topologies
Circuit Protection
DC-DC Conversion
General Power Conversion
