Name: IRFP2907PBF
Brand: Infineon Technologies
SKU: IRFP2907PBF
Price: 6.79000 USD
Availability: InStock

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IRFP2907PBF

Manufacturer part number:IRFP2907PBF

Manufacturer:Infineon Technologies

Description:IRFP2907PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFP2907PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	4.5MOhm
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC	75V
Technology	MOSFET (Metal Oxide)
Current Rating	209A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	470W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	470W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 125A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	209A Tc
Gate Charge (Qg) (Max) @ Vgs	620nC @ 10V
Rise Time	190ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	209A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	90A
Drain to Source Breakdown Voltage	75V
Pulsed Drain Current-Max (IDM)	840A
Dual Supply Voltage	75V
Recovery Time	210 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	24.99mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

IRFP2907PBF Product Details

IRFP2907PBF Description

This HEXFET power MOSFET IRFP2907PBF strip plane design uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the HEXFET power MOSFET include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these advantages makes the design an extremely efficient and reliable device used in a variety of applications.