NDB6020P Description
ON Semiconductor's patented, high-cell-density DMOS technology is used to make these logic level P-Channel enhancement mode power field-effect transistors. In the avalanche and commutation modes, this very high-density technology has been specifically optimized to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses. These devices are ideal for low-voltage applications including automotive, DC/DC converters, PWM motor controllers, and other battery-powered circuits that require fast switching, minimal in-line power loss, and transient resistance.
NDB6020P Features
Critical DC electrical parameters are specified at elevated temperatures.
The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High-density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications.
NDB6020P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
