Name: STB18N55M5
Brand: STMicroelectronics
SKU: STB18N55M5
Availability: InStock

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STB18N55M5

Manufacturer part number:STB18N55M5

Manufacturer:STMicroelectronics

Description:MOSFET N-Ch 550V 0.8 Ohm Mdmesh V 13A

Case Package:SOT-23

Datasheet:STB18N55M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB18N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	192m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1260pF @ 100V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Rise Time	9.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	13A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.24Ohm
Drain to Source Breakdown Voltage	550V
Pulsed Drain Current-Max (IDM)	52A
Avalanche Energy Rating (Eas)	200 mJ
Nominal Vgs	4 V
Height	4.6mm
Length	10.75mm
Width	10.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About STB18N55M5

The STB18N55M5 from STMicroelectronics is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-Ch 550V 0.8 Ohm Mdmesh V 13A.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the STB18N55M5, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.