Name: MTP6P20E
Brand: ON Semiconductor
SKU: MTP6P20E
Availability: InStock

new-10%

MTP6P20E

Manufacturer part number:MTP6P20E

Manufacturer:ON Semiconductor

Description:MTP6P20E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP6P20E Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Subcategory	FET General Purpose Powers
Voltage - Rated DC	-200V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	-6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	75W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	32ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-220AB
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	1Ohm
Pulsed Drain Current-Max (IDM)	21A
Avalanche Energy Rating (Eas)	180 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTP6P20E Product Details

MTP6P20E Description

High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. An effective drain-to-source diode with a quick recovery period is also provided by the energy-saving design. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

MTP6P20E Features

Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature