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MTB30P06VT4G

  • MTB30P06VT4G - MTB30P06VT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • MTB30P06VT4G - MTB30P06VT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

MTB30P06VT4G

MTB30P06VT4G

ON Semiconductor

MTB30P06VT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MTB30P06VT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 80MOhm
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-30A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3W Ta 125W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3W
Case Connection DRAIN
Turn On Delay Time14.7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time25.9ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Fall Time (Typ) 52.4 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -60V
Avalanche Energy Rating (Eas) 450 mJ
Nominal Vgs -2.6 V
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3091 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.881595$3.881595
10$3.661882$36.61882
100$3.454606$345.4606
500$3.259062$1629.531
1000$3.074587$3074.587

MTB30P06VT4G Product Details


MTB30P06VT4G Description

MTB30P06VT4G MOSFET has much superior body diode reverse recovery performance. MTB30P06VT4G ON Semiconductor can remove additional component. MTB30P06VT4G datasheet is suitable for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

MTB30P06VT4G Features

Pb-Free Packages are Available

IDSS and VDS(on) Specified

Elevated Temperature

Avalanche Energy Specified

MTB30P06VT4G Applications

High speed

Switching applications

Switching regulators

Converters

Solenoid and relay drivers


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