MPS8099RLRPG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 150MHz in the part.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPS8099RLRPG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRPG Applications
There are a lot of ON Semiconductor MPS8099RLRPG applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
