MMBTA63LT1G Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 1.5V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.This device can take an input voltage of 30V volts before it breaks down.During maximum operation, collector current can be as low as 500mA volts.
MMBTA63LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63LT1G Applications
There are a lot of ON Semiconductor MMBTA63LT1G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
