MMBTA05LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 4V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (96.1A).A transition frequency of 100MHz is present in the part.This device can take an input voltage of 60V volts before it breaks down.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor MMBTA05LT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
