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2N2484 PBFREE

2N2484 PBFREE

2N2484 PBFREE

Central Semiconductor Corp

2N2484 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N2484 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 360mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10μA 5V
Current - Collector Cutoff (Max) 2nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 60MHz
RoHS StatusROHS3 Compliant
In-Stock:2584 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.085000$2.085
10$1.966981$19.66981
100$1.855643$185.5643
500$1.750606$875.303
1000$1.651515$1651.515

2N2484 PBFREE Product Details

2N2484 PBFREE Overview


In this device, the DC current gain is 100 @ 10μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 100μA, 1mA.The device has a 60V maximal voltage - Collector Emitter Breakdown.

2N2484 PBFREE Features


the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 350mV @ 100μA, 1mA

2N2484 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N2484 PBFREE applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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