MMBT6428 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100μA 5V DC current gain.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Maximum collector currents can be below 500mA volts.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor MMBT6428 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface