MMBT4126LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -400mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Emitter base voltages of 4V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 200mA volts is possible.
MMBT4126LT3G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
a transition frequency of 250MHz
MMBT4126LT3G Applications
There are a lot of ON Semiconductor MMBT4126LT3G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
