PN2222TF Overview
This device has a DC current gain of 100 @ 150mA 10mV, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.As a result, the part has a transition frequency of 300MHz.Input voltage breakdown is available at 30V volts.In extreme cases, the collector current can be as low as 600mA volts.
PN2222TF Features
the DC current gain for this device is 100 @ 150mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 300MHz
PN2222TF Applications
There are a lot of ON Semiconductor PN2222TF applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
