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MMBF5457LT1G

MMBF5457LT1G

MMBF5457LT1G

ON Semiconductor

MMBF5457LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

MMBF5457LT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Max Power Dissipation225mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating5mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBF5457
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Operating ModeDEPLETION MODE
Power Dissipation200mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Continuous Drain Current (ID) 5mA
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 25V
FET Technology JUNCTION
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3803 items

MMBF5457LT1G Product Details

MMBF5457LT1G Description


MMBF5457LT1G JFET is easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).



MMBF5457LT1G Features


N-channel JFET

High input impedance

Voltage-controlled device

Low noise



MMBF5457LT1G Applications


Amplifiers

Switch circuits


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