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J271

J271

J271

ON Semiconductor

J271 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

J271 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 201mg
Operating Temperature-55°C~150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -30V
Max Power Dissipation350mW
Current Rating-50mA
Element ConfigurationSingle
Power Dissipation350mW
FET Type P-Channel
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 28mA
Gate to Source Voltage (Vgs) 30V
Current - Drain (Idss) @ Vds (Vgs=0) 6mA @ 15V
Voltage - Cutoff (VGS off) @ Id 1.5V @ 1nA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2923 items

J271 Product Details


J271 Description


J271 is a JFETs transistor by ON Semiconductor. J271 has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 350mW. It comes in TO-226-3 and TO-92-3 packing options. The J271 series of all-purpose amplifiers are designed for applications that require a p-channel operation. The low-cost TO-226AA (TO-92) plastic package is available, while the surface-mount TO-236 (SOT-23) package is available. For automated assembly, both the J and SST series are offered in tape-and-reel format (see Packaging Information).


J271 Features


? Low Cutoff Voltage: J270 <2 V

? High Input Impedance

? Very Low Noise

? High Gain



J271 Applications


? High-Gain, Low-Noise Amplifiers

? Low-Current, Low-Voltage Battery Amplifiers

? Ultrahigh Input Impedance Pre-Amplifiers

? High-Side Switching


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