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MJW1302AG

MJW1302AG

MJW1302AG

ON Semiconductor

MJW1302AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJW1302AG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -230V
Max Power Dissipation200W
Peak Reflow Temperature (Cel) 260
Current Rating-15A
Frequency 30MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation200W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 7A 5V
Current - Collector Cutoff (Max) 50μA ICBO
JEDEC-95 Code TO-247AD
Vce Saturation (Max) @ Ib, Ic 2V @ 1A, 10A
Collector Emitter Breakdown Voltage230V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage400mV
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1748 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.52000$3.52
30$3.00433$90.1299
120$2.61783$314.1396
510$2.24420$1144.542

MJW1302AG Product Details

MJW1302AG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 7A 5V.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 1A, 10A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The current rating of this fuse is -15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.30MHz is present in the transition frequency.Collector current can be as low as 15A volts at its maximum.

MJW1302AG Features


the DC current gain for this device is 50 @ 7A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 2V @ 1A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 30MHz

MJW1302AG Applications


There are a lot of ON Semiconductor MJW1302AG applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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