MMBT3904FA-7B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.A 200mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMBT3904FA-7B Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
MMBT3904FA-7B Applications
There are a lot of Diodes Incorporated MMBT3904FA-7B applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
