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MJD42CG

MJD42CG

MJD42CG

ON Semiconductor

MJD42CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD42CG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation1.75W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-6A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD42
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage1.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 2.3876mm
Length 6.7056mm
Width 6.223mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8707 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.067520$0.06752
500$0.049647$24.8235
1000$0.041373$41.373
2000$0.037956$75.912
5000$0.035473$177.365
10000$0.032998$329.98
15000$0.031913$478.695
50000$0.031380$1569

MJD42CG Product Details

MJD42CG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 600mA, 6A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 3MHz.The maximum collector current is 6A volts.

MJD42CG Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz

MJD42CG Applications


There are a lot of ON Semiconductor MJD42CG applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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