MJD253-1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 40MHz.A maximum collector current of 4A volts is possible.
MJD253-1G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 40MHz
MJD253-1G Applications
There are a lot of ON Semiconductor MJD253-1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
