MJD243T4 Overview
DC current gain in this device equals 40 @ 200mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As a result, the part has a transition frequency of 40MHz.As a result, it can handle voltages as low as 100V volts.In extreme cases, the collector current can be as low as 4A volts.
MJD243T4 Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJD243T4 Applications
There are a lot of ON Semiconductor MJD243T4 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
