2SAR554PT100 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 25mA, 500mA.Maintaining the continuous collector voltage at -1.5A is essential for high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.The part has a transition frequency of 340MHz.In extreme cases, the collector current can be as low as 1.5A volts.
2SAR554PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 340MHz
2SAR554PT100 Applications
There are a lot of ROHM Semiconductor 2SAR554PT100 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
