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MJD127TF

MJD127TF

MJD127TF

ON Semiconductor

MJD127TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD127TF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation1.75W
Terminal FormGULL WING
Current Rating-8A
Base Part Number MJD127
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation1.75W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Collector Emitter Breakdown Voltage100V
Collector Emitter Saturation Voltage2V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 1000
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1218 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.082720$0.08272
500$0.060824$30.412
1000$0.050686$50.686
2000$0.046501$93.002
5000$0.043459$217.295
10000$0.040427$404.27
15000$0.039098$586.47
50000$0.038444$1922.2

MJD127TF Product Details

MJD127TF Overview


In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -8A.Input voltage breakdown is available at 100V volts.A maximum collector current of 8A volts can be achieved.

MJD127TF Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A

MJD127TF Applications


There are a lot of ON Semiconductor MJD127TF applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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