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BC80740B5003XT

BC80740B5003XT

BC80740B5003XT

Infineon Technologies

BC80740B5003XT datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC80740B5003XT Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BC807
Power - Max 330mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 200MHz
RoHS StatusROHS3 Compliant
In-Stock:4791 items

BC80740B5003XT Product Details

BC80740B5003XT Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BC80740B5003XT Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the supplier device package of SOT-23-3

BC80740B5003XT Applications


There are a lot of Infineon Technologies BC80740B5003XT applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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