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KSB596O

KSB596O

KSB596O

ON Semiconductor

KSB596O datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB596O Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number KSB596
Power - Max 30W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 70μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 3MHz
In-Stock:2893 items

KSB596O Product Details

KSB596O Overview


DC current gain in this device equals 70 @ 500mA 5V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.

KSB596O Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 1.7V @ 300mA, 3A

KSB596O Applications


There are a lot of ON Semiconductor KSB596O applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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