MCH6102-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -375mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 375mV @ 15mA, 750mA.The base voltage of the emitter can be kept at -5V to achieve high efficiency.An input voltage of 30V volts is the breakdown voltage.Collector current can be as low as 1.5A volts at its maximum.
MCH6102-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -375mV
the vce saturation(Max) is 375mV @ 15mA, 750mA
the emitter base voltage is kept at -5V
MCH6102-TL-E Applications
There are a lot of ON Semiconductor MCH6102-TL-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
