Name: 2N5089
Brand: ON Semiconductor
SKU: 2N5089
Price: 0.14000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	25V
Max Power Dissipation	625mW
Current Rating	50mA
Base Part Number	2N5089
Polarity	NPN
Element Configuration	Single
Power Dissipation	625mW
Power - Max	625mW
Gain Bandwidth Product	50MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	500mV
Max Collector Current	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	400 @ 100μA 5V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	25V
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	50mA
Collector Emitter Saturation Voltage	500mV
Frequency - Transition	50MHz
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	3V
hFE Min	400
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

2N5089 Product Details

2N5089 Description

The 2N5089 is a silicon-based NPN amplifier transistor that is commonly used in audio equipment for amplification and other applications. It has a 25 Vdc Collector-Emitter Voltage and a 30 Vdc Collector-Base Voltage. The 2N5089 could deliver a continuous collector current of 50mAdc.

2N5089 Features

NPN is a type of transistor.
VCEO (Voltage Collector to Emitter) = 25 Vdc
30 Vdc Collector to Base Voltage (VCBO)
3.0 Vdc Emitter to Base Voltage (VEBO)
50 mAdc Collector Current (IC)
When IC = 100 Adc and VCE = 5.0 Vdc, the minimum hFE is 400.
When IC = 100 Adc and VCE = 5.0 Vdc, the maximum hFE is 1200.
Current-gain-bandwidth (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Product = 50 Mhz
Current Gain for Small Signals = 450 (min), 1800 (max)