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MCH3205-TL-E

MCH3205-TL-E

MCH3205-TL-E

ON Semiconductor

MCH3205-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MCH3205-TL-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2013
JESD-609 Code e6
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation800mW
Pin Count3
Power - Max 800mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 210mV @ 100mA, 2A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 380MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2909 items

Pricing & Ordering

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MCH3205-TL-E Product Details

MCH3205-TL-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.A maximum collector current of 3A volts can be achieved.

MCH3205-TL-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 210mV @ 100mA, 2A
the emitter base voltage is kept at 6V

MCH3205-TL-E Applications


There are a lot of ON Semiconductor MCH3205-TL-E applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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