2N4123TA Overview
This device has a DC current gain of 50 @ 2mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Supplier device package TO-92-3 comes with the product.The device has a 30V maximal voltage - Collector Emitter Breakdown.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
2N4123TA Features
the DC current gain for this device is 50 @ 2mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
the supplier device package of TO-92-3
2N4123TA Applications
There are a lot of ON Semiconductor 2N4123TA applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
