KSK596PCWD Description
KSK596PCWD is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. KSK596PCWD junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits
KSK596PCWD Features
Excellent voltage characteristic
Excellent transient characteristic
Gate-drain voltage of -20 V
Junction temperature of 150 °C
KSK596PCWD Applications
Audio, telephone capacitor microphones
