KSH45H11TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.40MHz is present in the transition frequency.Input voltage breakdown is available at 80V volts.A maximum collector current of 8A volts is possible.
KSH45H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11TF Applications
There are a lot of ON Semiconductor KSH45H11TF applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
