2N5680 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N5680 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOW LEAKAGE
Subcategory
Other Transistors
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2N5680
JESD-30 Code
O-MBCY-W3
Qualification Status
Not Qualified
Operating Temperature (Max)
200°C
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 250mA 2V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
120V
Current - Collector (Ic) (Max)
1A
Transition Frequency
30MHz
Power Dissipation-Max (Abs)
1W
VCEsat-Max
1 V
Power Dissipation Ambient-Max
10W
RoHS Status
Non-RoHS Compliant
In-Stock:375 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$21.73290
$2173.29
2N5680 Product Details
2N5680 Description
The 2N5680 from ON Semiconductor is a -120V Silicon PNP Epitaxial Planar High Voltage Transistor designed for use as a driver for high power transistors in general purpose amplifier and switching circuits.
2N5680 Features
96% of customers would recommend to a friend
12 month limited warranty *view Terms & Conditions for details
Collector-base voltage(Vcbo = -120V)
Emitter-base voltage(Vebo = -4V)
Multicomp Pro products are rated 4.6 out of 5 stars
2N5680 Applications
Power Management
Industrial
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