KSD261GBU Overview
DC current gain in this device equals 200 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.Maximum collector currents can be below 500mA volts.
KSD261GBU Features
the DC current gain for this device is 200 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
KSD261GBU Applications
There are a lot of ON Semiconductor KSD261GBU applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
