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BD435

BD435

BD435

Rochester Electronics, LLC

BD435 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BD435 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingBulk
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 240
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusCOMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 36W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 4A
Transition Frequency 3MHz
Frequency - Transition 3MHz
RoHS StatusNon-RoHS Compliant
In-Stock:4403 items

BD435 Product Details

BD435 Overview


In this device, the DC current gain is 40 @ 10mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.In the part, the transition frequency is 3MHz.The device exhibits a collector-emitter breakdown at 32V.

BD435 Features


the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 3MHz

BD435 Applications


There are a lot of Rochester Electronics, LLC BD435 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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