KSD1691YS Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 2A 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 100mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.Parts of this part have transition frequencies of 3MHz.An input voltage of 45V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 5A volts.
KSD1691YS Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 3MHz
KSD1691YS Applications
There are a lot of ON Semiconductor KSD1691YS applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
