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KTC3198-BL A1G

KTC3198-BL A1G

KTC3198-BL A1G

Taiwan Semiconductor Corporation

KTC3198-BL A1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

SOT-23

KTC3198-BL A1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 80MHz
RoHS StatusROHS3 Compliant
In-Stock:2340 items

Pricing & Ordering

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KTC3198-BL A1G Product Details

KTC3198-BL A1G Overview


In this device, the DC current gain is 70 @ 2mA 6V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Product comes in the supplier's device package TO-92.Device displays Collector Emitter Breakdown (50V maximal voltage).

KTC3198-BL A1G Features


the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the supplier device package of TO-92

KTC3198-BL A1G Applications


There are a lot of Taiwan Semiconductor Corporation KTC3198-BL A1G applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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