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KSA931YTA

KSA931YTA

KSA931YTA

ON Semiconductor

KSA931YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA931YTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation1W
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating-700mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSA931
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Transistor Application SWITCHING
Gain Bandwidth Product100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage-300mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -8V
hFE Min 40
Height 8mm
Length 4.9mm
Width 3.9mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1045 items

Pricing & Ordering

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KSA931YTA Product Details

KSA931YTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 50mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at -8V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-700mA).In the part, the transition frequency is 100MHz.Single BJT transistor can be broken down at a voltage of 60V volts.A maximum collector current of 700mA volts is possible.

KSA931YTA Features


the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -8V
the current rating of this device is -700mA
a transition frequency of 100MHz

KSA931YTA Applications


There are a lot of ON Semiconductor KSA931YTA applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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