BUL770-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 7 @ 800mA 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 9V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2.5A volts at Single BJT transistors maximum.
BUL770-S Features
the DC current gain for this device is 7 @ 800mA 1V
the vce saturation(Max) is 250mV @ 160mA, 800mA
the emitter base voltage is kept at 9V
BUL770-S Applications
There are a lot of Bourns Inc. BUL770-S applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
