J107 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
J107 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
201mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Voltage - Rated DC
25V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
100mA
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
625mW
FET Type
N-Channel
Transistor Application
SWITCHING
Breakdown Voltage
-25V
Drain to Source Voltage (Vdss)
25V
Continuous Drain Current (ID)
100mA
Gate to Source Voltage (Vgs)
-25V
FET Technology
JUNCTION
Drain to Source Resistance
8Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
100mA @ 15V
Voltage - Cutoff (VGS off) @ Id
500mV @ 1μA
Resistance - RDS(On)
8Ohm
Height
5.33mm
Length
5.2mm
Width
4.19mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1446 items
J107 Product Details
J107 Description
J107 is an N-channel JFET Transistor in TO-92 Package. The onsemi J107 transistor is designed for analog or digital switching applications where very low on resistance is mandatory. Its Vgs - Gate-Source Breakdown Voltage is -25v, Gate-Source Cutoff Voltage is -4.5v, and Rds On - Drain-Source Resistance is 8 Ohms. Another feature of onsemi J107 is that the power dissipation is 625mW. And the ideal operating temperature of J107 transistor is between -55 and 150°C. J107 Features
