PMBFJ177,215 Description
PMBFJ177,215 is a 30V P-channel silicon field-effect transistor. The NXP PMBFJ177,215 is intended for application with analog switches, choppers, commutators, etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor PMBFJ177,215 is in the SOT-23 package with 300mW power dissipation.
PMBFJ177,215 Features
Drain-source voltage: 30 V
Gate current (d.c.): 50 mA
Total power dissipation up to Tamb = 25℃ 300 mW
Storage temperature range: ?65 to 150℃
Drain-source ON-resistance: 300Ω ?
PMBFJ177,215 Applications
Industrial
Medical
Enterprise systems
Enterprise projectors
Personal electronics
Tablets
