Name: IXTT26N60P
Brand: IXYS
SKU: IXTT26N60P
Price: 10.01000 USD
Availability: InStock

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IXTT26N60P

Manufacturer part number:IXTT26N60P

Manufacturer:IXYS

Description:Trans MOSFET N-CH 600V 26A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXTT26N60P Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	PolarHV™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	26A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	460W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	460W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	26A Tc
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	26A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.27Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	65A
Avalanche Energy Rating (Eas)	1200 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About IXTT26N60P

The IXTT26N60P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 600V 26A 3-Pin(2+Tab) TO-268.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTT26N60P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.