IRFP450B Description
These N-channel enhanced mode power field effect transistors IRFP450B are produced using Fairchild's proprietary planar DMOS technology.
This advanced technology is tailor-made to minimize on-resistance, provides superior switching performance, and withstands high-energy pulses in avalanche and rectifier modes. These devices are very suitable for high frequency switching power supplies, power factor correction and half-bridge-based electronic lamp ballasts.
IRFP450B Features
·14A,500VRpS(on)=0.39Ω@VGs=10V.Low gate charge(tvpical 87 nC)·Low Crss(typical 60pF).Fast switching
· 100% avalanche tested·Improved dvidt capability
IRFP450B Applications
high frequency switching power supplies
power factor correction
half-bridge-based electronic lamp ballasts.
