NDC632P Description
These P-Channel logic level enhanced mode power field effect transistors are produced using high cell density DMOS technology unique to Fairchild. This very high-density process is specially tailored to minimize on-resistance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, where Avery Smaoutine surface mount packages require fast high-end switches and low inline power consumption.
NDC632P Features
1-2.7A-20V.Rns=0.14 @V=-4.5V
Rpsn)=0.2Ω @VGs=-2.7V.
Proprietary SuperSOT-6 package design using copper
lead frame for superior thermal and electrical capabilities
High density cell design for extremely low Rpsion
Exceptional on-resistance and maximum DC current capability.
NDC632P Applications
low-voltage applications
laptop power management
other battery-powered circuits
