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IRF540A

IRF540A

IRF540A

ON Semiconductor

IRF540A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

IRF540A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 1997
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 52mOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 107W Tc
Element ConfigurationSingle
Power Dissipation107W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 4 V
Width 10.67mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3145 items

IRF540A Product Details

IRF540A Description


Power MOSFETIRF540A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET.


IRF540A Features

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

175c Operating Temperature

Lower Leakage Current:10A(Max) @Vs=100V

Lower RDS(ON):0.041 Ω(Typ.)

IRF540A Applications


high-level power

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