IRF6718L2TRPBF Description
To achieve the lowest on-state resistance in a package with the footprint of a D-pak, the IRF6718L2TRPBF blends the latest HEXFET? Power MOSFET Silicon technology with innovative DirectFET? packaging. When application note AN-1035 addressing manufacturing methods and procedures is followed, the DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. Dual-sided cooling is possible with the DirectFET package, allowing for maximum thermal transfer in power systems.
IRF6718L2TRPBF Features
?RoHS-compliant, with no lead or bromide
?Compatible with dual-sided cooling
?Inductance of the package is really low.
?Extremely Low ROS|CN for Lower Conduction Losses
?It's designed for Active O-Ring and Efuse applications.
IRF6718L2TRPBF Applications
Switching applications
