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TSM9N90ECZ C0G

TSM9N90ECZ C0G

TSM9N90ECZ C0G

Taiwan Semiconductor Corporation

N-Channel Tube 1.4 Ω @ 4.5A, 10V ±30V 2470pF @ 25V 72nC @ 10V 900V TO-220-3

SOT-23

TSM9N90ECZ C0G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power Dissipation-Max 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:4016 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.99000$2.99
10$2.69900$26.99
100$2.16880$216.88
500$1.68682$843.41

TSM9N90ECZ C0G Product Details

TSM9N90ECZ C0G Overview


A device's maximum input capacitance is 2470pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

TSM9N90ECZ C0G Features


a 900V drain to source voltage (Vdss)


TSM9N90ECZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM9N90ECZ C0G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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