Welcome to Hotenda.com Online Store!

logo
userjoin
Home

HUF76639S3S

  • HUF76639S3S - HUF76639S3S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • HUF76639S3S - HUF76639S3S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

HUF76639S3S

HUF76639S3S

ON Semiconductor

HUF76639S3S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

HUF76639S3S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2002
Series UltraFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating50A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 180W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation180W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 51A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time55ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 151 ns
Continuous Drain Current (ID) 51A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 100V
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:10392 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.486718$1.486718
10$1.402564$14.02564
100$1.323173$132.3173
500$1.248277$624.1385
1000$1.177620$1177.62

HUF76639S3S Product Details

HUF76639S3S Description


The ON Semiconductor HUF76639S3S is a 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET.



HUF76639S3S Features


  • Ultra-Low On-Resistance

- rDS(ON) = 0.026 Ω, VGS = 10 V

  • Simulation Models

- Temperature Compensated PSPICE and SABER Electrical Models

- SPICE and SABER Thermal Impedance Models

  • Peak Current vs Pulse Width Curve

  • UIS Rating Curve

  • Switching Time vs RGS Curves



HUF76639S3S Applications


  • AC-DC Merchant Power Supply

  • Other Industrial

  • Consumer Appliances


Related Products

Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers

NTP22N06L - MOSFET N-CH 60V 22A TO220AB
ON Semiconductor

NTP22N06L

SFR9014TF - MOSFET P-CH 60V 5.3A DPAK
ON Semiconductor

SFR9014TF

SPD02N50C3 - SPD02N50C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
Infineon Technologies

SPD02N50C3

APT58M50JU2 - MOSFET N-CH 500V 58A SOT227
Microsemi Corporation

APT58M50JU2

FQB3N30TM - MOSFET N-CH 300V 3.2A D2PAK
ON Semiconductor

FQB3N30TM

SFW9Z34TM - MOSFET P-CH 60V 18A D2PAK
ON Semiconductor

SFW9Z34TM

IPI80N06S4L07AKSA2 - Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-262 Tube
Infineon Technologies

IPI80N06S4L07AKSA2

IRFP23N50LPBF - MOSFET (Metal Oxide) N-Channel Tube 235mOhm @ 14A, 10V ±30V 3600pF @ 25V 150nC @ 10V 500V TO-247-3
Vishay Siliconix

IRFP23N50LPBF

SQM50028EM_GE3 - Automotive N-Channel 60 V (D-S) 175 °C MOSFET
Vishay Siliconix

SQM50028EM_GE3

PMV31XN,215 - SMALL SIGNAL N-CHANNEL MOSFET
Rochester Electronics, LLC

PMV31XN,215

View All Related Products

Get Subscriber

Enter Your Email Address, Get the Latest News