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SPD02N50C3

  • SPD02N50C3 - SPD02N50C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • SPD02N50C3 - SPD02N50C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SPD02N50C3

SPD02N50C3

Infineon Technologies

SPD02N50C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPD02N50C3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2002
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating1.8A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 25W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation25W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Rise Time5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 1.8A
Threshold Voltage 3V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage500V
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 5.4A
Avalanche Energy Rating (Eas) 50 mJ
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:24174 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.35000$0.35
500$0.3465$173.25
1000$0.343$343
1500$0.3395$509.25
2000$0.336$672
2500$0.3325$831.25

SPD02N50C3 Product Details

SPD02N50C3 Description


The SPD02N50C3 500V CoolMOS?C3 Transistor is Infineon's third series of CoolMOS?with market entry in 2001. C3 is the "working horse" of the portfolio.



SPD02N50C3 Features


  • Low specific on-state resistance (RDS(on)*A)

  • Very low energy storage in output capacitance (Eoss) @400V

  • Low gate charge (Qg)

  • Field-proven CoolMOS? quality

  • CoolMOS? technology has been manufactured by Infineon since 1998



SPD02N50C3 Applications


  • Server

  • Telecom

  • Consumer

  • PC power

  • Adapter


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