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HUF75309D3ST

HUF75309D3ST

HUF75309D3ST

ON Semiconductor

MOSFET N-CH 55V 19A DPAK

SOT-23

HUF75309D3ST Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-Pak
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series UltraFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 55W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 20V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:3136 items

About HUF75309D3ST

The HUF75309D3ST from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 55V 19A DPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HUF75309D3ST, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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