IRF6718L2TR1PBF Description
The IRF6718L2TRPbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a D-peak. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment, vapor phase, and infra-red or convection soldering techniques when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual-sided cooling to maximize thermal transfer in power systems.
IRF6718L2TR1PBF Features
RoHS Compliant Containing No Lead and Bromide
Dual-Sided Cooling Compatible
Ultra-Low Package Inductance
Very Low RDS(ON) for Reduced Conduction Losses
Optimized for Active O-Ring / Efuse Applications
Compatible with existing Surface Mount Techniques
