HGTG18N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
HGTG18N120BN Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code
8541.29.00.95
Voltage - Rated DC
1.2kV
Max Power Dissipation
390W
Current Rating
54A
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
390W
Input Type
Standard
Transistor Application
MOTOR CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
54A
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
2.45V
Turn On Time
38 ns
Test Condition
960V, 18A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 18A
Turn Off Time-Nom (toff)
345 ns
IGBT Type
NPT
Gate Charge
165nC
Current - Collector Pulsed (Icm)
165A
Td (on/off) @ 25°C
23ns/170ns
Switching Energy
800μJ (on), 1.8mJ (off)
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1291 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.805061
$3.805061
10
$3.589680
$35.8968
100
$3.386491
$338.6491
500
$3.194802
$1597.401
1000
$3.013965
$3013.965
HGTG18N120BN Product Details
HGTG18N120BN Description
NPT (Non-Punch Through) IGBT HGTG18N120BN belongs to the family of MOS gated high-voltage switching IGBTs manufactured by ON Semiconductor that feature high input impedance of MOSFETs and low on-state conduction loss of bipolar transistors. Due to its superior performance, HGTG18N120BN is well suited for various high-voltage switching applications where moderate frequencies are required.
HGTG18N120BN Features
High input impedance Low on-state conduction loss MOS gated high-voltage switching IGBTs Available in the JEDEC STYLE TO-247 package
HGTG18N120BN Applications
AC and DC motor controls Power supplies and drivers for solenoids, relays, and contactors
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